International Rectifier IRF820, MOSFET IRF 820 N channel TO 220 2.5A 500V
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Control IC, CIC(R) International Rectifier IR 4428 Case type DIP 8 L Specification Control IC 20 V, 1.5 A

Half Bridge Based MOSFET Driver, 0.35A, CMOS, PDIP8, PLASTIC, MS-001AB, DIP-8
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Half Bridge Based MOSFET Driver, 2.5A, CMOS, PDIP13, PLASTIC, DIP-14/13
Power Field-Effect Transistor, 7.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
TRANSISTOR 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power