Inductor RF Molded Wirewound 0.56uH 20% 25.2MHz 40Q-Factor 0.52A 0.4Ohm DCR 1812 T/R
Inductor RF Shielded Multi-Layer 0.56uH 5% 25.2MHz 30Q-Factor Ceramic 0.33A 0.49Ohm DCR 1008 Bulk
SMD Inductor 0.56uH 20% 1210 Ferrite Unshielded
Shielded Power Inductor 560nH 4A 20% SMD Ferrite T/R
Res Thick Film 2010 0.56 Ohm 5% 1W ±100ppm/°C Pad SMD Automotive T/R
Fixed Inductors for Surface Mounting
0.56uH 5% Ferrite SMD Inductor 1210 450mA
SMD Inductor 0.56uH 10% 45Q Ceramic 0.4A 1.33R 1008
Res Thick Film 2512 0.56 Ohm 5% 2W ±100ppm/°C Pad SMD Automotive T/R
Ind Chip 560nH 20% 25MHz 15 35mA T/R
Inductor Power Shielded Wirewound 0.56uH 20% 100KHz Ferrite 10.18A 0.006Ohm DCR T/R
Inductor Power Shielded Wirewound 560nH 20% 100KHz 18A 2.5mOhm DCR RDL Bulk
Inductor Power Molded 0.56uH 20% Powdered Iron 16.5A 0.005Ohm DCR
Inductor Power Shielded 0.56uH 20% 1MHz Metal 2.8A 0.059Ohm DCR 0806 T/R
Inductor Power Shielded Wirewound 0.56uH/0.36uH 20% 100KHz Powdered Iron 36A 0.00133Ohm DCR Automotive T/R
Ind Chip 560nH 10% 25MHz 25 Ferrite 150mA
1200V 10A N-Ch SiC MOSFET TO-247 585mR Rds(on)
Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
SiC MOSFET 1200V 14A N-Channel TO-247 280mR
650V 29A N-Ch SiC MOSFET TO-220-3
