Inductor Power Shielded Wirewound 0.56uH 30% 1MHz Ferrite 2.05A 0.06Ohm DCR Automotive T/R
SMD HIGH CURRENT SHIELDED CHOKE
N-CH MOSFET 30V 5A SOP 8-Pin Dual Drain
SiC MOSFET, N-Ch, 650V, 70A, 0.039Ω, TO-247
Silicon carbide Power MOSFET 1200 V, 91 A, 21 mOhm (typ. TJ = 25 C) in an HiP247 package
Power Field-Effect Transistor, 17A I(D), 1200V, 0.208ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN
SiC MOSFET, 1700V, 3.7A, 1.5ohm, N-Ch, 3-Pin
N-CH MOSFET 30V 13A 8-Pin SOP SMT
SiC MOSFET, 1200V, 72A, 0.039Ω, N-Ch, TO-247
P-CH MOSFET 30V 6A Si 8-Pin SMT
Power Field-Effect Transistor, 55A I(D), 1200V, 0.052ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN
Power Field-Effect Transistor, 30A I(D), 650V, 0.104ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN
Power Field-Effect Transistor, 93A I(D), 650V, 0.0286ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN
SiC MOSFET, 1200V, 31A, N-Ch, 0.104Ω, TO-247
650V 21A N-Ch SiC MOSFET TO-247 3-Pin
Inductor Power Shielded/Molded Wirewound 0.56uH 20% 100KHz Metal 27A 0.00165Ohm DCR 4040 T/R
General Purpose Inductor,
Inductor Power Shielded/Molded Wirewound 0.56uH 20% 100KHz 12A 0.0093Ohm DCR 1616 Automotive T/R
Inductor Power Shielded/Molded Wirewound 0.56uH 20% 100KHz 13.9A 0.00954Ohm DCR Automotive T/R
Inductor Power Shielded/Molded Wirewound 0.56uH 20% 100KHz 17.7A 0.00452Ohm DCR Automotive T/R
