
Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
HEXFET/FETKY International Rectifier SI 4420 DY N channel Case type SO 8 I(D) Max 12.5 A

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,