Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, CASE D 93, SEMITRANS 2N, 7 PIN
Insulated Gate Bipolar Transistor, 960A I(C), 1200V V(BR)CES, N-Channel, CASE D 59, SEMITRANS 4, 5 PIN
Transistor,
Insulated Gate Bipolar Transistor, 232A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
IGBT MODULE, 1.2KV, 190A, SEMITRANS 2; Transistor Polarity:N Channel; DC Collector Current:190A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7 ;RoHS Compliant: Yes
Trans IGBT Module N-CH 1200V 422A 7-Pin Case D-56
Trans IGBT Module N-CH 1200V 313A 5-Pin Case D-56
Trans IGBT Module N-CH 1200V 422A 5-Pin Case D-56
Insulated Gate Bipolar Transistor, 190A I(C), 1200V V(BR)CES, N-Channel, CASE D 62, SEMITRANS 2, 5 PIN
Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, CASE D60, SEMITRANS-16
Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 422A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS-7
SEMITRANS
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 500A I(C), 1200V V(BR)CES, N-Channel, CASE D 60, SEMITRANS 4, 5 PIN
IGBT, MODULE, 600V, 280A
Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES
Insulated Gate Bipolar Transistor, 229A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 370A I(C), 1200V V(BR)CES, N-Channel, CASE D57, SEMITRANS 3, 5 PIN
