Search Results for "VCE-ANEX02"

PS2711 Series Single Ch 40 Vce 3750 Vrms High CTR Transistor - SOIC-4

4-Ch Optocoupler, 5kV Iso, 55V Vce, 16mA IF, PDIP

PS2501 Series Single Channel 80 Vce 5000 Vrms Through Hole Photocoupler - DIP-4

PNP BJT Transistor, 60V Vce, 0.6A Ic, 3-Pin, Ceramic

Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 160V; IC (A): 1.5A; HFE Min: 70; HFE Max: 240; VCE (V): 5V; IC (mA): 100mA; VCE(SAT) (V): 1.5V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 100+ MHz; PTM Max (W): 1W; Package: TO-251/252; package_code: TO-251/252; mfr_package_code: TO-251/252

Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 80V; IC (A): 5A; HFE Min: 70; HFE Max: 240; VCE (V): 1V; IC (mA): 1000mA; VCE(SAT) (V): 0.4V; IC (mA)1: 3000mA; IB (mA): 150mA; FT Min (MHz): 120+ MHz; PTM Max (W): 1W; Package: TO-251/252; package_code: TO-251/252; mfr_package_code: TO-251/252

PS2581 Series Single Ch 80 Vce 5 kVrms Long Creepage SMT Photocoupler - DIP-4

PS2561 Series Dual Ch 70 Vce 5000 Vrms SMT High Isolation Photocoupler - DIP-4

PS2911 Series Single Channel 40 Vce 2500 Vrms Photocoupler - Ultra Small Flat-4

PS2581 Series Single Ch 80 Vce 5 kVrms Long Creepage SMT Photocoupler - DIP-4

PS2706 Series Single Ch 40 Vce 3750 Vrms AC In Darlington Transistor - SOIC-4

Module, IGBT; 1 V @ DegC VCE; 260 A @ DegC; 200 A @ DegC; 20 nH (Max.)

N-Ch IGBT, 1200V Vce, 150A Ic, 4-Pin MINIBLOC

Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 60V; IC (A): 3A; HFE Min: 100; HFE Max: 320; VCE (V): 5V; IC (mA): 500mA; VCE(SAT) (V): 1V; IC (mA)1: 2000mA; IB (mA): 200mA; FT Min (MHz): 8+ MHz; PTM Max (W): 2W; Package: ITO-220AB; package_code: ITO-220AB; mfr_package_code: ITO-220AB

Medium Power PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 70V; IC (A): 7A; HFE Min: 30; HFE Max: 150; VCE (V): 4V; IC (mA): 2000mA; VCE(SAT) (V): 3.5V; IC (mA)1: 7000mA; IB (mA): 3000mA; FT Min (MHz): 10 MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB

Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 300V; IC (A): 0.1A; HFE Min: 30; HFE Max: 200; VCE (V): 10V; IC (mA): 20mA; VCE(SAT) (V): 1V; IC (mA)1: 10mA; IB (mA): 1mA; FT Min (MHz): 70+ MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB

Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 60V; IC (A): 3A; HFE Min: 60; HFE Max: 300; VCE (V): 5V; IC (mA): 500mA; VCE(SAT) (V): 1V; IC (mA)1: 3000mA; IB (mA): 300mA; FT Min (MHz): 3+ MHz; PTM Max (W): 1.5W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB

Medium Power PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 100V; IC (A): 2A; HFE Min: 1000; HFE Max: 12000; VCE (V): 3V; IC (mA): 2000mA; VCE(SAT) (V): 3V; IC (mA)1: 4000mA; IB (mA): 400mA; FT Min (MHz): 25 MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB

Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 80V; IC (A): 3A; HFE Min: 70; HFE Max: 320; VCE (V): 4V; IC (mA): 1000mA; VCE(SAT) (V): 1.2V; IC (mA)1: 3000mA; IB (mA): 375mA; FT Min (MHz): 30 MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB

Medium Power PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC (A): 3A; HFE Min: 82; HFE Max: 390; VCE (V): 3V; IC (mA): 500mA; VCE(SAT) (V): 1V; IC (mA)1: 2000mA; IB (mA): 200mA; FT Min (MHz): 70+ MHz; PTM Max (W): 1W; Package: TO-252; package_code: TO-252; mfr_package_code: TO-252