Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, TO-251A, IPAK-3
Inductor RF Unshielded Wirewound 0.068uH 5% 200MHz 37Q-Factor Ceramic 0.6A 0.34Ohm DCR 0603 T/R
Inductor RF Unshielded Wirewound 0.068uH 5% 200MHz 60Q-Factor Ceramic 0.5A 0.38Ohm DCR 0805 T/R
Inductor RF Unshielded Wirewound 0.068uH 5% 250MHz 22Q-Factor Ceramic 0.1A 1.12Ohm DCR 0402 T/R
Inductor RF Unshielded Wirewound 0.068uH 5% 200MHz 60Q-Factor Ceramic 0.5A 0.38Ohm DCR 0805 T/R