
Power Field-Effect Transistor, 200A I(D), 150V, 0.00355ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-14
Power Field-Effect Transistor, 200A I(D), 75V, 0.0011ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-14
Power Field-Effect Transistor, 200A I(D), 100V, 0.002ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-14
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC, SMA-S, 2 PIN