MOSFET N-Channel 800V 7.1A Through Hole
Power Field-Effect Transistor, 7.1A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
800V N-Channel MOSFET, 7.8A ID, 1.2R Rds On, TO-247
800V 7.8A N-Channel MOSFET TO-247 1.2R
800V 7.8A TO-247AC Power MOSFET
800V 4.8A Through Hole MOSFET
Trans MOSFET N-CH 1KV 5.6A 3-Pin(2+Tab) TO-204AA
Power Field-Effect Transistor, 7.8A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Power Field-Effect Transistor, 5.6A I(D), 1000V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Power Field-Effect Transistor, 4.8A I(D), 800V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Power Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
