
Junction Field-Effect Transistor, -200V, -400mA, 1.3W, DIP Package

Junction Field-Effect Transistor, -100V, -700mA, 1.3W, DIP Package
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3