Power Field-Effect Transistor, 8A I(D), 1200V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
Power Field-Effect Transistor, 28A I(D), 1000V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Power Field-Effect Transistor, 23A I(D), 1000V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Rectifier Diode, 1 Phase, 2 Element, 15A, 600V V(RRM), Silicon, TO-247, ROHS COMPLIANT, TO-247, 3 PIN
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-247, ROHS COMPLIANT, TO-247, 3 PIN
Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4