Power Field-Effect Transistor, 25A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-11

Power Field-Effect Transistor, 2.7A I(D), 40V, 0.11ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-6
Power Field-Effect Transistor, 2.7A I(D), 65V, 0.13ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-6