Search Results for "IFS3Z1AD200"

Smart monitoring node based on the STM32F103xx and LIS331DLH Evaluation Board

Trans IGBT Module N-CH 1.2KV 75A 43-Pin

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-41

Insulated Gate Bipolar Transistor,

6uH Shielded Wirewound Inductor, 1.35A, 0.288 Ohm DCR, 1008 SMD

10uH Shielded SMD Inductor, 750mA, 20% Tol

3.3uH Shielded Wirewound Inductor, 1.7A, 155mR DCR, 1008 SMD

Inductor Power Shielded Wirewound 6.8uH 20% 100KHz 0.95A 0.299Ohm DCR 1111 T/R

Inductor Power Shielded Wirewound 6.8uH 20% 100KHz 1.13A 0.307Ohm DCR 1111 T/R

6.8uH Shielded Wirewound Inductor, 1A, 0.37 Ohm, 100kHz, 1008 SMD

SMD Shielded Power Inductor 1.5uH 2.2A 72mR 100kHz 1008

22uH Shielded SMD Inductor, 500mA, 1.05R DCR

33uH 20% Shielded SMD Inductor, 900mA, 1515

22uH 20% Shielded SMD Inductor, 1.2A, 315mR DCR

2.2uH Shielded SMD Inductor, 1.9A, 98mR DCR

6.8uH Shielded Wirewound Inductor, 1.5A, 115mR DCR, 1515 SMD

Inductor Power Shielded Wirewound 3.3uH 20% 100KHz 1.4A 0.131Ohm DCR 1111 T/R

1uH 2.6A Shielded Wirewound Inductor, 100kHz, 20%, SMD

SMD Shielded Power Inductor 3.3uH 1.7A 120mR

Inductor Power Shielded Wirewound 2.2uH 20% 100KHz 1.53A 0.107Ohm DCR 1111 T/R