Power Field-Effect Transistor, 44A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

Power Field-Effect Transistor, 45A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Power Field-Effect Transistor, 44A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

RF Choke Wirewound 470uH 10% 790KHz 60Q-Factor Ferrite 90mA 11.6Ohm DCR AXL Bulk

RF Choke Wirewound 1mH 10% 790KHz 65Q-Factor Ferrite 100mA 14Ohm DCR AXL Bulk

RF Choke Wirewound 47uH 10% 2.5MHz 60Q-Factor Ferrite 205mA 2.3Ohm DCR AXL T/R

RF Choke Wirewound 3.9uH 10% 7.9MHz 50Q-Factor Ferrite 555mA 320mOhm DCR AXL Bulk

RF Choke Wirewound 4.7uH 10% 7.9MHz 70Q-Factor Ferrite 620mA 390mOhm DCR AXL Bulk

RF Choke Wirewound 2.2uH 10% 7.9MHz 50Q-Factor Ferrite 630mA 250mOhm DCR AXL Bulk

RF Choke Wirewound 1uH 10% 25MHz 55Q-Factor Ferrite 920mA 190mOhm DCR AXL Bulk

RF Choke Wirewound 3.3uH 10% 7.9MHz 50Q-Factor Ferrite 575mA 300mOhm DCR AXL Bulk
RF Choke Wirewound 22uH 10% 2.5MHz 50Q-Factor Ferrite 285mA 1.2Ohm DCR AXL T/R
RF Choke Wirewound 1.5uH 10% 7.9MHz 50Q-Factor Ferrite 830mA 230mOhm DCR AXL T/R