Search Results for &quot; IRF644B &quot;

International Rectifier IRF6662 N-channel MOSFET Transistor, 8.3 A, 100 V, 7-pin DirectFET MZ

Volume Production

Continuous Drain Current (ID): 8.3A

Fall Time: 5.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6631

International Rectifier IRF6631 N-channel MOSFET Transistor, 13 A, 30 V, 6-pin DirectFET SQ

Volume Production

Continuous Drain Current (ID): 13A

Fall Time: 4.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.59mm

IRF6612

Trans MOSFET N-CH 30V 136A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 24A

Drain to Source Breakdown Voltage: 30V

Drain to Source Voltage (Vdss): 30V

Gate to Source Voltage (Vgs): 20V

+11

IRF634A

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630M

Stmicroelectronics

9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

ROHS COMPLIANT, TO-220, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630A

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

TO-220, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630B

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF621R

Harris

Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF6623

Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6665

Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6608

N-Channel MOSFET, 30V, 13A, 9mR Rds(on), Surface Mount

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 13A

Current Rating: 55A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 11mR

+26

IRF6609

Trans MOSFET N-CH 20V 150A 7-Pin Direct-FET MT

Obsolete

Continuous Drain Current (ID): 150A

Current Rating: 31A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 1.6R

+18

IRF6646

Trans MOSFET N-CH 80V 12A 7-Pin Direct-FET MN

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Drain to Source Breakdown Voltage: 80V

Fall Time: 12ns

+14

IRF6216

Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

SOP-8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 2.2A

Drain to Source Breakdown Voltage: -150V

Max Operating Temperature: 150°C

IRF630L

Vishay(Siliconix)

MOSFET N-CH 200V 9A TO-262

Not Recommended for New Design

Package/Case: TO-262-3

Continuous Drain Current (ID): 9A

Drain to Source Voltage (Vdss): 200V

Input Capacitance: 800pF

IRF610B

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220

IRF610A

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF6636

Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6645

Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6619

Power Field-Effect Transistor, 30A I(D), 20V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MX, ISOMETRIC-2

SMALL OUTLINE, R-XDSO-G2

Obsolete

Continuous Drain Current (ID): 30A

Current Rating: 30A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 1.65R

Search Results for "IRF644B"

Filters

IRF6662

International Rectifier IRF6662 N-channel MOSFET Transistor, 8.3 A, 100 V, 7-pin DirectFET MZ

Volume Production

Continuous Drain Current (ID): 8.3A

Fall Time: 5.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6631

International Rectifier IRF6631 N-channel MOSFET Transistor, 13 A, 30 V, 6-pin DirectFET SQ

Volume Production

Continuous Drain Current (ID): 13A

Fall Time: 4.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.59mm

IRF6612

Trans MOSFET N-CH 30V 136A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 24A

Drain to Source Breakdown Voltage: 30V

Drain to Source Voltage (Vdss): 30V

Gate to Source Voltage (Vgs): 20V

+11

IRF634A

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630M

Stmicroelectronics

9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

ROHS COMPLIANT, TO-220, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630A

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

TO-220, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630B

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF621R

Harris

Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF6623

Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6665

Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6608

N-Channel MOSFET, 30V, 13A, 9mR Rds(on), Surface Mount

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 13A

Current Rating: 55A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 11mR

+26

IRF6609

Trans MOSFET N-CH 20V 150A 7-Pin Direct-FET MT

Obsolete

Continuous Drain Current (ID): 150A

Current Rating: 31A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 1.6R

+18

IRF6646

Trans MOSFET N-CH 80V 12A 7-Pin Direct-FET MN

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Drain to Source Breakdown Voltage: 80V

Fall Time: 12ns

+14

IRF6216

Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

SOP-8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 2.2A

Drain to Source Breakdown Voltage: -150V

Max Operating Temperature: 150°C

IRF630L

Vishay(Siliconix)

MOSFET N-CH 200V 9A TO-262

Not Recommended for New Design

Package/Case: TO-262-3

Continuous Drain Current (ID): 9A

Drain to Source Voltage (Vdss): 200V

Input Capacitance: 800pF

IRF610B

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220

IRF610A

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF6636

Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6645

Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6619

Power Field-Effect Transistor, 30A I(D), 20V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MX, ISOMETRIC-2

SMALL OUTLINE, R-XDSO-G2

Obsolete

Continuous Drain Current (ID): 30A

Current Rating: 30A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 1.65R