Search Results for &quot; IRF6602 &quot;

International Rectifier IRF6633 N-channel MOSFET Transistor, 16 A, 20 V, 7-pin DirectFET MP

Volume Production

Continuous Drain Current (ID): 16A

Fall Time: 4.3ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6644

Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6648

International Rectifier IRF6648 N-channel MOSFET Transistor, 86 A, 60 V, 7-pin DirectFET MN

Obsolete

Continuous Drain Current (ID): 86A

Drain to Source Breakdown Voltage: 60V

Drain to Source Voltage (Vdss): 60V

Drain-source On Resistance-Max: 7MR

IRF6668

International Rectifier IRF6668 N-channel MOSFET Transistor, 55 A, 80 V, 7-pin DirectFET MZ

Volume Production

Continuous Drain Current (ID): 55A

Fall Time: 23ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6621

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Fall Time: 4.1ns

Gate to Source Voltage (Vgs): 20V

+10

IRF6619

Power Field-Effect Transistor, 30A I(D), 20V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

ROHS COMPLIANT, ISOMETRIC-3

Obsolete

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

N-Channel MOSFET, 30V, 30A, 2.2mR Rds(on), Surface Mount

CHIP CARRIER, R-XBCC-N3

Transferred

Continuous Drain Current (ID): 30A

Current Rating: 150A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 2.2R

+20

IRF6626

Trans MOSFET N-CH 30V 16A 7-Pin Direct-FET ST

Obsolete

Continuous Drain Current (ID): 72A

Current Rating: 16A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 4mR

Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Transferred

Continuous Drain Current (ID): 18A

Current Rating: 18A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 3.2mR

IRF6611

Trans MOSFET N-CH 30V 27A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 32A

Current Rating: 27A

Drain to Source Breakdown Voltage: 30V

Drain to Source Voltage (Vdss): 30V

Trans MOSFET N-CH 100V 59A 7-Pin Direct-FET MX T/R

Obsolete

Continuous Drain Current (ID): 19A

Drain to Source Breakdown Voltage: 100V

Drain to Source Voltage (Vdss): 30V

Fall Time: 4.4ns

+16

Power Field-Effect Transistor, 19A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2

ROHS COMPLIANT, ISOMETRIC-2

Active

Number of Terminals: 2

Terminal Position: DUAL

Number of Elements: 1

IRF6635

Power Field-Effect Transistor, 32A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6646

Trans MOSFET N-CH 80V 12A 7-Pin Direct-FET MN

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Drain to Source Breakdown Voltage: 80V

Fall Time: 12ns

+14

IRF6645

Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6678

Trans MOSFET N-CH 30V 30A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 30A

Current Rating: 30A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 1.7R

IRF6631

International Rectifier IRF6631 N-channel MOSFET Transistor, 13 A, 30 V, 6-pin DirectFET SQ

Volume Production

Continuous Drain Current (ID): 13A

Fall Time: 4.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.59mm

IRF6623

Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Search Results for "IRF6602"

Filters

IRF6633

International Rectifier IRF6633 N-channel MOSFET Transistor, 16 A, 20 V, 7-pin DirectFET MP

Volume Production

Continuous Drain Current (ID): 16A

Fall Time: 4.3ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6644

Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6648

International Rectifier IRF6648 N-channel MOSFET Transistor, 86 A, 60 V, 7-pin DirectFET MN

Obsolete

Continuous Drain Current (ID): 86A

Drain to Source Breakdown Voltage: 60V

Drain to Source Voltage (Vdss): 60V

Drain-source On Resistance-Max: 7MR

IRF6668

International Rectifier IRF6668 N-channel MOSFET Transistor, 55 A, 80 V, 7-pin DirectFET MZ

Volume Production

Continuous Drain Current (ID): 55A

Fall Time: 23ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6621

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Fall Time: 4.1ns

Gate to Source Voltage (Vgs): 20V

+10

IRF6619

Power Field-Effect Transistor, 30A I(D), 20V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

ROHS COMPLIANT, ISOMETRIC-3

Obsolete

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

N-Channel MOSFET, 30V, 30A, 2.2mR Rds(on), Surface Mount

CHIP CARRIER, R-XBCC-N3

Transferred

Continuous Drain Current (ID): 30A

Current Rating: 150A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 2.2R

+20

IRF6626

Trans MOSFET N-CH 30V 16A 7-Pin Direct-FET ST

Obsolete

Continuous Drain Current (ID): 72A

Current Rating: 16A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 4mR

Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Transferred

Continuous Drain Current (ID): 18A

Current Rating: 18A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 3.2mR

IRF6611

Trans MOSFET N-CH 30V 27A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 32A

Current Rating: 27A

Drain to Source Breakdown Voltage: 30V

Drain to Source Voltage (Vdss): 30V

Trans MOSFET N-CH 100V 59A 7-Pin Direct-FET MX T/R

Obsolete

Continuous Drain Current (ID): 19A

Drain to Source Breakdown Voltage: 100V

Drain to Source Voltage (Vdss): 30V

Fall Time: 4.4ns

+16

Power Field-Effect Transistor, 19A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2

ROHS COMPLIANT, ISOMETRIC-2

Active

Number of Terminals: 2

Terminal Position: DUAL

Number of Elements: 1

IRF6635

Power Field-Effect Transistor, 32A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6646

Trans MOSFET N-CH 80V 12A 7-Pin Direct-FET MN

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Drain to Source Breakdown Voltage: 80V

Fall Time: 12ns

+14

IRF6645

Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6678

Trans MOSFET N-CH 30V 30A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 30A

Current Rating: 30A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 1.7R

IRF6631

International Rectifier IRF6631 N-channel MOSFET Transistor, 13 A, 30 V, 6-pin DirectFET SQ

Volume Production

Continuous Drain Current (ID): 13A

Fall Time: 4.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.59mm

IRF6623

Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3