Search Results for &quot; IRF6618 &quot;

N-Channel MOSFET, 30V, 27A, 3.4mR Rds On, Surface Mount

Obsolete

Continuous Drain Current (ID): 27A

Current Rating: 25A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 5.5mR

+22

International Rectifier IRF6645 N-channel MOSFET Transistor, 5.7 A, 100 V, 7-pin DirectFET SJ

Obsolete

Continuous Drain Current (ID): 5.7A

Drain to Source Breakdown Voltage: 100V

Drain to Source Voltage (Vdss): 100V

Fall Time: 5.1ns

IRF6607

Power Field-Effect Transistor, 27A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 27A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 4.4mR

Drain to Source Voltage (Vdss): 30V

+15

IRF6633

International Rectifier IRF6633 N-channel MOSFET Transistor, 16 A, 20 V, 7-pin DirectFET MP

Volume Production

Continuous Drain Current (ID): 16A

Fall Time: 4.3ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6644

Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6626

Trans MOSFET N-CH 30V 16A 7-Pin Direct-FET ST

Obsolete

Continuous Drain Current (ID): 72A

Current Rating: 16A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 4mR

Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Transferred

Continuous Drain Current (ID): 18A

Current Rating: 18A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 3.2mR

IRF6635

Power Field-Effect Transistor, 32A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6609

Trans MOSFET N-CH 20V 150A 7-Pin Direct-FET MT

Obsolete

Continuous Drain Current (ID): 150A

Current Rating: 31A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 1.6R

IRF6646

Trans MOSFET N-CH 80V 12A 7-Pin Direct-FET MN

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Drain to Source Breakdown Voltage: 80V

Fall Time: 12ns

+14

Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6620

Trans MOSFET N-CH 20V 27A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 27A

Current Rating: 27A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 2.1R

IRF6621

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Fall Time: 4.1ns

Gate to Source Voltage (Vgs): 20V

+10

IRF6622

Trans MOSFET N-CH 25V 15A 6-Pin Direct-FET SQ T/R

Volume Production

Continuous Drain Current (ID): 15A

Fall Time: 5.6ns

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

IRF6604

MOSFET

Obsolete

Continuous Drain Current (ID): 15A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 13mR

Drain to Source Voltage (Vdss): 30V

+11

IRF6662

International Rectifier IRF6662 N-channel MOSFET Transistor, 8.3 A, 100 V, 7-pin DirectFET MZ

Volume Production

Continuous Drain Current (ID): 8.3A

Fall Time: 5.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6631

International Rectifier IRF6631 N-channel MOSFET Transistor, 13 A, 30 V, 6-pin DirectFET SQ

Volume Production

Continuous Drain Current (ID): 13A

Fall Time: 4.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.59mm

IRF6623

Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6665

Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Search Results for "IRF6618"

Filters

IRF6603

N-Channel MOSFET, 30V, 27A, 3.4mR Rds On, Surface Mount

Obsolete

Continuous Drain Current (ID): 27A

Current Rating: 25A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 5.5mR

+22

International Rectifier IRF6645 N-channel MOSFET Transistor, 5.7 A, 100 V, 7-pin DirectFET SJ

Obsolete

Continuous Drain Current (ID): 5.7A

Drain to Source Breakdown Voltage: 100V

Drain to Source Voltage (Vdss): 100V

Fall Time: 5.1ns

IRF6607

Power Field-Effect Transistor, 27A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 27A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 4.4mR

Drain to Source Voltage (Vdss): 30V

+15

IRF6633

International Rectifier IRF6633 N-channel MOSFET Transistor, 16 A, 20 V, 7-pin DirectFET MP

Volume Production

Continuous Drain Current (ID): 16A

Fall Time: 4.3ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6644

Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6626

Trans MOSFET N-CH 30V 16A 7-Pin Direct-FET ST

Obsolete

Continuous Drain Current (ID): 72A

Current Rating: 16A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 4mR

Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Transferred

Continuous Drain Current (ID): 18A

Current Rating: 18A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 3.2mR

IRF6635

Power Field-Effect Transistor, 32A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6609

Trans MOSFET N-CH 20V 150A 7-Pin Direct-FET MT

Obsolete

Continuous Drain Current (ID): 150A

Current Rating: 31A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 1.6R

IRF6646

Trans MOSFET N-CH 80V 12A 7-Pin Direct-FET MN

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Drain to Source Breakdown Voltage: 80V

Fall Time: 12ns

+14

Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6620

Trans MOSFET N-CH 20V 27A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 27A

Current Rating: 27A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 2.1R

IRF6621

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Fall Time: 4.1ns

Gate to Source Voltage (Vgs): 20V

+10

IRF6622

Trans MOSFET N-CH 25V 15A 6-Pin Direct-FET SQ T/R

Volume Production

Continuous Drain Current (ID): 15A

Fall Time: 5.6ns

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

IRF6604

MOSFET

Obsolete

Continuous Drain Current (ID): 15A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 13mR

Drain to Source Voltage (Vdss): 30V

+11

IRF6662

International Rectifier IRF6662 N-channel MOSFET Transistor, 8.3 A, 100 V, 7-pin DirectFET MZ

Volume Production

Continuous Drain Current (ID): 8.3A

Fall Time: 5.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6631

International Rectifier IRF6631 N-channel MOSFET Transistor, 13 A, 30 V, 6-pin DirectFET SQ

Volume Production

Continuous Drain Current (ID): 13A

Fall Time: 4.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.59mm

IRF6623

Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6665

Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3