Search Results for &quot; IRF9393TRPBF &quot;

Trans MOSFET P-CH 30V 12A 8-Pin SOIC Tube

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 12A

Drain to Source Breakdown Voltage: -30V

Fall Time: 66ns

IRF9310PBF

Power Field-Effect Transistor, 20A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Min Operating Temperature: -55

Terminal Position: DUAL

Power Field-Effect Transistor, 12A I(D), 30V, 0.0119ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Trans MOSFET P-CH 30V 12A 8-Pin SOIC T/R

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 12A

Fall Time: 66ns

Gate to Source Voltage (Vgs): 25V

IRF9317TRPBF

Power Field-Effect Transistor, 16A I(D), 30V, 0.0066ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 5.4A I(D), 30V, 0.059ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

P-Channel MOSFET, 30V, 9.2A, 0.0163Ω, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

P-Channel MOSFET, 30V, 6.8A, 0.027 Ohm, SOP-8

HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

INTERNATIONAL RECTIFIER IRF9358TRPBF DUAL P CHANNEL, -30V, -9.2A, SOIC-8

Unknown

Package/Case: SOIC

Continuous Drain Current (ID): -9.2A

Drain to Source Voltage (Vdss): -30V

Gate to Source Voltage (Vgs): 20V

+13

Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 9.8A

Drain to Source Voltage (Vdss): 30V

Gate to Source Voltage (Vgs): 20V

+12

Power Field-Effect Transistor, 20A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SOP-8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Min Operating Temperature: -55

Terminal Position: DUAL

P-Channel MOSFET, 30V, 8A, 0.021Ω, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Power Field-Effect Transistor, 5.4A I(D), 30V, 0.059ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC N

Continuous Drain Current (ID): -5.4A

Drain to Source Voltage (Vdss): -30V

Drain-source On Resistance-Max: 59MR

Power Field-Effect Transistor, 15A I(D), 30V, 0.0072ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 20A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 20A

Drain to Source Voltage (Vdss): -30V

Gate to Source Voltage (Vgs): 20V

INTERNATIONAL RECTIFIER IRF9321TRPBF P CHANNEL, MOSFET, -30V, -15A, SOIC

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): -15A

Drain to Source Voltage (Vdss): -30V

Drain-source On Resistance-Max: 7.2MR

P-Channel MOSFET, -30V, -8A, 21mΩ, SOP-8, Surface Mount

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): -8A

Drain to Source Voltage (Vdss): -30V

Drain-source On Resistance-Max: 21MR

+11

MOSF N-P CH 20V 6.8A,4.6A SO-8

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 6.8A

Gate to Source Voltage (Vgs): 20V

Height: 1.5mm

Power Field-Effect Transistor, 12A I(D), 30V, 0.0119ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Search Results for "IRF9393TRPBF"

Filters

Trans MOSFET P-CH 30V 12A 8-Pin SOIC Tube

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 12A

Drain to Source Breakdown Voltage: -30V

Fall Time: 66ns

IRF9310PBF

Power Field-Effect Transistor, 20A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Min Operating Temperature: -55

Terminal Position: DUAL

Power Field-Effect Transistor, 12A I(D), 30V, 0.0119ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Trans MOSFET P-CH 30V 12A 8-Pin SOIC T/R

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 12A

Fall Time: 66ns

Gate to Source Voltage (Vgs): 25V

IRF9317TRPBF

Power Field-Effect Transistor, 16A I(D), 30V, 0.0066ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 5.4A I(D), 30V, 0.059ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

P-Channel MOSFET, 30V, 9.2A, 0.0163Ω, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

P-Channel MOSFET, 30V, 6.8A, 0.027 Ohm, SOP-8

HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

INTERNATIONAL RECTIFIER IRF9358TRPBF DUAL P CHANNEL, -30V, -9.2A, SOIC-8

Unknown

Package/Case: SOIC

Continuous Drain Current (ID): -9.2A

Drain to Source Voltage (Vdss): -30V

Gate to Source Voltage (Vgs): 20V

+13

Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 9.8A

Drain to Source Voltage (Vdss): 30V

Gate to Source Voltage (Vgs): 20V

+12

Power Field-Effect Transistor, 20A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SOP-8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Min Operating Temperature: -55

Terminal Position: DUAL

P-Channel MOSFET, 30V, 8A, 0.021Ω, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Power Field-Effect Transistor, 5.4A I(D), 30V, 0.059ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC N

Continuous Drain Current (ID): -5.4A

Drain to Source Voltage (Vdss): -30V

Drain-source On Resistance-Max: 59MR

Power Field-Effect Transistor, 15A I(D), 30V, 0.0072ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 20A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 20A

Drain to Source Voltage (Vdss): -30V

Gate to Source Voltage (Vgs): 20V

INTERNATIONAL RECTIFIER IRF9321TRPBF P CHANNEL, MOSFET, -30V, -15A, SOIC

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): -15A

Drain to Source Voltage (Vdss): -30V

Drain-source On Resistance-Max: 7.2MR

P-Channel MOSFET, -30V, -8A, 21mΩ, SOP-8, Surface Mount

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): -8A

Drain to Source Voltage (Vdss): -30V

Drain-source On Resistance-Max: 21MR

+11

MOSF N-P CH 20V 6.8A,4.6A SO-8

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 6.8A

Gate to Source Voltage (Vgs): 20V

Height: 1.5mm

Power Field-Effect Transistor, 12A I(D), 30V, 0.0119ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8