Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel
INTERNATIONAL RECTIFIER IRGP4262DPBF IGBT Single Transistor, 60 A, 1.7 V, 250 W, 650 V, TO-247AC, 3 Pins
Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel
Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel
IGBT, SINGLE, 1.55V, 32A, TO-247AD; DC Collector Current:32A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:140W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:3; Operating Temperature Max:175 C
INTERNATIONAL RECTIFIER IRGP4630DPBF IGBT, SINGLE, 1.65V, 47A, TO-247AC