DUAL OP-AMP, 3000uV OFFSET-MAX, 1.7MHz BAND WIDTH, PDSO8, MINI, PLASTIC, SO-8
IGBT Power Module 600V 320A SOT-227-4
2-Ch Op Amp, 1.8V-6V, 480kHz BW, SOIC, SM
1.8V Rail-to-Rail Op Amp, 1.8MHz GBW, 68mA Out, 1Ch, SOIC
600V 300A IGBT Power Module, N-CH, SOT-227-4
IGBT MOD 600V 430A 1000W SOT227B
Insulated Gate Bipolar Transistor, 120A I(C), 300V V(BR)CES, N-Channel, MINIBLOC-4
4-Ch Op Amp, 1.8MHz BW, 1.8V-6V Supply, SOIC, SM
2-Ch Op Amp, 1.8MHz BW, 1.8-6V, SOIC, SM
1.8V min. voltage supply, micropower
Trans IGBT Chip N-CH 600V 200A 4-Pin SOT-227B
Insulated Gate Bipolar Transistor, 400A I(C), 300V V(BR)CES, N-Channel, MINIBLOC-4
Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4
Quad Op-Amp, 630kHz GBW, 1mV Vos, SOIC
2-Ch Op Amp, 1.8MHz GBW, 1.8V-6V Supply, 65dB CMRR, TSSOP
4-Ch Op Amp, 1.8V Sup, 1600MHz BW, 0.54V/µs SR, 14-Pin PDSO
1.8V Op Amp, 630kHz GBW, 1Ch, SO, 6V Max
1.8V Op Amp, Rail-to-Rail, 1.8MHz GBW, 65dB CMRR, 1Ch, SO
Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4
