NE5531079 Series 460 MHz 7.5 V Operation Silicon RF Power LDMOS FET
NE5550779A-T1-A
NE5550979A-T1-A
Dual Op Amp, 10MHz GBW, 20V, SOIC-8, Low Noise
2-Ch 10MHz Op Amp, Low Noise, 8-SOIC
Dual Op Amp, 10MHz BW, 9V/µs SR, 70dB CMRR, 15V, SOP
FET RF 30V 900MHZ 79A
Dual Op Amp, 10MHz, 20V, SOIC-8, Low Noise
Trans RF MOSFET 30V 3A 4-Pin Case 79A T/R
10MHz Op Amp, 1-Ch, 15V, 13V/µs Slew Rate, 8-SOIC
10MHz Op Amp, 500uV Vos, 13V/µs SR, SOP-8, 15V
Trans MOSFET N-CH 20V 3A T/R
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
10MHz Op Amp, Single, SOIC, 20V, Low Noise, 13V/µs
2-Ch 10MHz Low-Noise Op Amp, 8-SOIC
Dual Op Amp, 10MHz BW, 15V, 8-SO, Bipolar
RF MOSFET Transistors UHF Band RF Power
Dual Op-Amp, 10MHz BW, 500uV Vos, 15V, SOP-8
FET RF 30V 460MHZ 79A
