Variable Capacitance Diode, Very High Frequency, 11pF C(T), 30V, Silicon, DO-35,
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, T72, 4 PIN
Power Bipolar Transistor, 1A I(C), 75V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/Epoxy, 3 Pin