12nH 5% 100MHz Ceramic Chip Inductor 0402 SMT 320mA
18nH Fixed Inductor, 240mA, 700mR DCR, 0402 SMD
15nH 2% RF Chip Inductor 0402 SMD 240mA
1.8nH 400mA 80mR 0402 SMD Fixed Inductor
DIODE GEN PURP 200V 1A MSR
FILTER
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FR-E740-120 / 170SC 30 A, FFR-MSH-170-30A-RF1, Mitsubishi Electric
Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Power Field-Effect Transistor, 15A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Trans MOSFET N-CH Si 60V 45A
Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
FR-E740-230 / 300SC 50 A, FFR-MSH-300-50A-RF1, Mitsubishi Electric
Trans MOSFET N-CH Si 60V 50A
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FR-E740-060 / 095SC 16 A, FFR-MSH-095-16A-RF1, Mitsubishi Electric
Rectifier Diode, 1 Element, 20A, 350V V(RRM),
Array/Network Resistor, Isolated, Thin Film, 0.6W, 10000ohm, 50V, 1% +/-Tol, 150ppm/Cel, Surface Mount, 1620, SOIC, ROHS COMPLIANT
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon,
