L BAND, Si, NPN, RF POWER TRANSISTOR, 0.250 X 0.320 INCH, PLASTIC, M170, 2 PIN
Small Signal Schottky Diode; Configuration: Single; VRRM Max (V): 30V; IAV Max (A): 0.35; VFM Max (V): 0.6V; @ IF (A): 0.2A; IFSM Max (A): 15A; IR Max (uA): 5uA; @VR (V): 20V; Package: DO-35

Inductor Power Shielded Drum Core 32.49uH/33uH 20% 100KHz Ferrite 0.519A 0.9289Ohm DCR 2020 T/R
Inductor Power Shielded Drum Core 3.61uH/3.3uH 20% 100KHz Ferrite 2.07A 0.0605Ohm DCR 2020 T/R