Inductor Power Shielded Wirewound 3.3uH 20% 100KHz Metal 6.9A 0.0297Ohm DCR Automotive T/R
Inductor Power Shielded Wirewound 3.3uH 20% 100KHz Metal 2.5A 0.11Ohm DCR T/R
Inductor Power Shielded Wirewound 3.3uH 20% 100KHz Metal 10A 0.0175Ohm DCR Automotive T/R
Inductor Power Shielded Wirewound 3.3uH 20% 100KHz Metal 3.9A 0.061Ohm DCR T/R
RF Choke Wirewound 3.3uH 20% 7.96MHz 35Q-Factor Ferrite 1.9A 0.036Ohm DCR RDL
High Current RF Choke Bobbin Core 3.3uH 20% 1KHz Ferrite 11.4A 0.005Ohm DCR RDL
500V 7.6A N-Channel MOSFET, 600mR, TO-252
High Current RF Choke Bobbin Core 3.3uH 20% 1KHz Ferrite 27A 0.003Ohm DCR RDL
3.3uH Radial Inductor, 5.5A, 20% Tol, Ferrite Core, 7.96MHz
Inductor RF Unshielded Wirewound 3.3uH 20% 7.96MHz 20Q-Factor Ferrite 5.5A 25mOhm DCR RDL Bulk
High Current RF Choke Bobbin Core 3.3uH 20% 1KHz Ferrite 21A 0.003Ohm DCR RDL
Inductor Power Unshielded Wirewound 3.3uH 20% 100KHz Ferrite 2.08A 0.041Ohm DCR T/R
Choke Wirewound 3.3uH 20% 1KHz 2.7A 22mOhm DCR RDL
Inductor Power Bobbin Core 3.3uH 20% 7.96MHz Ferrite 1.44A 0.087Ohm DCR T/R
High Current RF Choke Bobbin Core 3.3uH 20% 1KHz Ferrite 9A 0.005Ohm DCR RDL
600V 6.2A N-Channel MOSFET, 750mR Rds On, TO-252
600V 3.2A N-Channel MOSFET, 1.4 Ohm, TO-252
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC, DPAK-3
500V 3.2A N-Channel MOSFET, 1.4 Ohm, TO-252
600V N-Ch MOSFET, 4.5A ID, 0.95ohm RdsOn, TO-252
