
Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
N CHANNEL MOSFET, 80V, 12A DIRECTFET MN, FULL REEL; Transistor Polarity:N Channel; Continuous Drain Current Id:68A; Drain Source Voltage Vds:80V; On Resistance Rds(on):7.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.9V;RoHS Compliant: Yes