Search Results for "MJD112G"

NPN Darlington Transistor 100V 2A DPAK

PNP Darlington BJT, 100V, 2A, DPAK, Surface Mount Power Transistor

NPN Darlington Transistor, 100V, 2A, 1.75W, TO-251

100V 2A NPN Darlington Power BJT, DPAK, 1.75W

2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

NPN Transistor, TO-251-3, 100V, 2A, 20W

2A, 100V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3

Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3

Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

2A, 100V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3

2A, 100V, NPN, Si, POWER TRANSISTOR, CASE 369-07, 3 PIN

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 100V; IC (A): 2A; HFE Min: 1000; HFE Max: 12000; VCE (V): 3V; IC (mA): 2000mA; VCE(SAT) (V): 3V; IC (mA)1: 4000mA; IB (mA): 40mA; FT Min (MHz): 25 MHz; PTM Max (W): 1.5W; Package: TO-251/252; package_code: TO-251/252; mfr_package_code: TO-251/252

Power Bipolar Transistor,

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, PLASTIC, DPAK-3/2

2A, 100V, NPN, Si, POWER TRANSISTOR