N-CHANNEL MOSFET 8V 2.8A 15W A-Package
Surface Mount FET, 2.8A ID, 8V Drain to Source Breakdown Voltage, Lead Free
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, 79A, 4 PIN
Trans JFET 8V 2.8A GaAs HJFET 4-Pin Case 79A T/R
RF Development Tools For NE6510179A-A Power at 2.4 GHz
RF Development Tools For NE6510179A-A Power at 1.9 GHz
RF Development Tools For NE6510179A-A Power at 3.5 GHz
N-CHANNEL GaAs FET, 8V Vdss, 2.8A ID, 1.9GHz Freq, A Package
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN
