Small Signal MOSFET; Channel Polarity: N channel; PD Max (W): 0.15W; V(BR)DSS Min (V): 60V; ID Max (A): 0.115A; RDS(ON) Max (Ω): 7.5 Ohm; ID (A): 0.05A; VGS (V): 5V; ID (mA): 250mA; GFS Min (S): 0.08 S; VDS (V): 10V; ID (A) 1: 0.2A; Package: SOT-523
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236,
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3