2500MHz - 2700MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 3 X 3 MM, 1 MM HEIGHT, MODULE-16
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, 1.05 X 0.55MM, 0.25MM HEIGHT, SUBMINIATURE, LEADLESS PACKAGE-3
Narrow Band High Power Amplifier,
RF FET, 2GHz, 5V, 100mA, 0.6dB NF, GaAs, SOT-343
RF Amplifier, 100MHz-3.5GHz, 22dB Gain, 0.8dB NF, SOT-363
GaAs RF FET, 2GHz, 16.6dB Gain, 0.5dB NF, 5V Vdss, SOT-343
RF Switch Diode, 100V, 1A, SOT-23, Surface Mount
RF Amplifier, 100MHz-6GHz, 13.6dB Gain, 1.42dB NF, SOT-343
RF Amp Single MMIC Amp 6GHz 5.5V 4-Pin(3+Tab) SOT-89 T/R
RF Amp Single LNA 6GHz 6-Pin SOT-363 T/R
RF Diode Schottky 2V 3-Pin SOT-323 T/R
Pin Diode, 100V V(BR), Silicon, LEAD FREE PACKAGE-3
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 6 PIN
Pin Diode, 100V V(BR), Silicon, ROHS COMPLIANT PACKAGE-3
Wide Band Medium Power Amplifier, 250MHz Min, 3000MHz Max, 1 Func, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SOT-89, 4 PIN
Wide Band Medium Power Amplifier, 40MHz Min, 3000MHz Max, 1 Func, GAAS, 4.50 X 4.10 MM, 1.50 MM HEIGHT, HALOGEN AND LEAD FREE, SOT-89, 3 PIN
Mixer Diode, Silicon, ROHS COMPLIANT PACKAGE-3
Pin Diode, 100V V(BR), Silicon, LEAD FREE PACKAGE-6
Trans Voltage Suppressor Diode, 15V V(RWM), Unidirectional, 2 Element, Silicon, ROHS COMPLIANT PACKAGE-3
