Search Results for &quot; IRF840 &quot;

MOSFET N-CH 30V 14A 8-SOIC

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 14A

Drain to Source Voltage (Vdss): 30V

Input Capacitance: 1.04nF

+10

Power Field-Effect Transistor, 27A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MX, CAN, ISOMETRIC-3

ROHS COMPLIANT, MX, CAN, ISOMETRIC-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

N-Ch MOSFET, 30V, 28A, 0.0022Ω, 1-Element, 3-Term

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF8306MTRPBF

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Transferred

Continuous Drain Current (ID): 23A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 3.6mR

Drain to Source Voltage (Vdss): 30V

+15

IRF8714GTRPBF

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 14A

Drain to Source Voltage (Vdss): 30V

Input Capacitance: 1.02nF

Power Field-Effect Transistor, 14A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8

SOP-8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Obsolete

Max Operating Temperature: 150

Power Field-Effect Transistor, 14A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Transferred

Continuous Drain Current (ID): 60A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 10.9mR

Drain to Source Voltage (Vdss): 30V

+17

30V 28A N-Channel MOSFET, 0.0022Ω RDS(on)

CHIP CARRIER, R-XBCC-N3

Transferred

Continuous Drain Current (ID): 28A

Drain to Source Voltage (Vdss): 30V

Max Operating Temperature: 150°C

Min Operating Temperature: -40°C

MOSFET N-CH 30V 11A 8-SOIC

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 11A

Drain to Source Voltage (Vdss): 30V

Fall Time: 4.4ns

+19

Power Field-Effect Transistor, 34A I(D), 30V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MT, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Transferred

Continuous Drain Current (ID): 34A

Drain to Source Voltage (Vdss): 30V

Input Capacitance: 6.14nF

Lead Free: Lead Free

IRF8113GTRPBF

MOSFET MOSFT 30V 16.6A 6mOhm 24nC

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 17.2A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 5.6mR

+24

IRF8910GTRPBF

Trans MOSFET N-CH 20V 10A 8-Pin SOIC T/R

Volume Production

Package/Case: SO

Continuous Drain Current (ID): 10A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 13.4mR

Power Field-Effect Transistor, 27A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MX, CAN, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Transferred

Continuous Drain Current (ID): 150A

Drain to Source Voltage (Vdss): 30V

Input Capacitance: 4.404nF

Lead Free: Lead Free

+11

Power Field-Effect Transistor, 34A I(D), 30V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MT, ISOMETRIC-3

MT, ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF8302MTRPBF

Power Field-Effect Transistor, 31A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Power Field-Effect Transistor, 14A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF8304MTR1PBF

Power Field-Effect Transistor, 28A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

Obsolete

Continuous Drain Current (ID): 170A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 3.2mR

Drain to Source Voltage (Vdss): 30V

IRF8306MTR1PBF

Power Field-Effect Transistor

Obsolete

Continuous Drain Current (ID): 23A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 25mR

Drain to Source Voltage (Vdss): 30V

+17

IRF8010STRRPBF

Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

SMALL OUTLINE, R-PSSO-G2

Obsolete

Package/Case: TO-263-3

Continuous Drain Current (ID): 80A

Drain to Source Voltage (Vdss): 100V

Input Capacitance: 3.83nF

Search Results for "IRF840"

Filters

MOSFET N-CH 30V 14A 8-SOIC

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 14A

Drain to Source Voltage (Vdss): 30V

Input Capacitance: 1.04nF

+10

Power Field-Effect Transistor, 27A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MX, CAN, ISOMETRIC-3

ROHS COMPLIANT, MX, CAN, ISOMETRIC-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

N-Ch MOSFET, 30V, 28A, 0.0022Ω, 1-Element, 3-Term

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF8306MTRPBF

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Transferred

Continuous Drain Current (ID): 23A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 3.6mR

Drain to Source Voltage (Vdss): 30V

+15

IRF8714GTRPBF

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 14A

Drain to Source Voltage (Vdss): 30V

Input Capacitance: 1.02nF

Power Field-Effect Transistor, 14A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8

SOP-8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Obsolete

Max Operating Temperature: 150

Power Field-Effect Transistor, 14A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Transferred

Continuous Drain Current (ID): 60A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 10.9mR

Drain to Source Voltage (Vdss): 30V

+17

30V 28A N-Channel MOSFET, 0.0022Ω RDS(on)

CHIP CARRIER, R-XBCC-N3

Transferred

Continuous Drain Current (ID): 28A

Drain to Source Voltage (Vdss): 30V

Max Operating Temperature: 150°C

Min Operating Temperature: -40°C

MOSFET N-CH 30V 11A 8-SOIC

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 11A

Drain to Source Voltage (Vdss): 30V

Fall Time: 4.4ns

+19

Power Field-Effect Transistor, 34A I(D), 30V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MT, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Transferred

Continuous Drain Current (ID): 34A

Drain to Source Voltage (Vdss): 30V

Input Capacitance: 6.14nF

Lead Free: Lead Free

IRF8113GTRPBF

MOSFET MOSFT 30V 16.6A 6mOhm 24nC

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 17.2A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 5.6mR

+24

IRF8910GTRPBF

Trans MOSFET N-CH 20V 10A 8-Pin SOIC T/R

Volume Production

Package/Case: SO

Continuous Drain Current (ID): 10A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 13.4mR

Power Field-Effect Transistor, 27A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MX, CAN, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Transferred

Continuous Drain Current (ID): 150A

Drain to Source Voltage (Vdss): 30V

Input Capacitance: 4.404nF

Lead Free: Lead Free

+11

Power Field-Effect Transistor, 34A I(D), 30V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MT, ISOMETRIC-3

MT, ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF8302MTRPBF

Power Field-Effect Transistor, 31A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Power Field-Effect Transistor, 14A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF8304MTR1PBF

Power Field-Effect Transistor, 28A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

Obsolete

Continuous Drain Current (ID): 170A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 3.2mR

Drain to Source Voltage (Vdss): 30V

IRF8306MTR1PBF

Power Field-Effect Transistor