RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, 79A, 4 PIN
NE68133 Series 10 V 9 GHz NPN Silicon High Frequency Transistor - SOT-23-3
NE68133 Series 10 V 9 GHz NPN Silicon High Frequency Transistor - SOT-23-3
NE651R479 Series 1 W 35 dB 3.7 GHz Medium Power GaAs HJ-FET