SiC Power MOSFET 1.2kV 40A 80mR N-CH TO-247
Transceiver, 1-Func, BICMOS, PDSO24, 0.300 INCH, PLASTIC, SOIC-24
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
Transceiver, 1-Func, BICMOS, PDSO24, 0.300 INCH, SOIC-24
N-CH MOSFET 30V 5A SOP 8-Pin Dual Drain
N-CH MOSFET 30V 13A 8-Pin SOP SMT
Inductor Power Shielded Wirewound 0.56uH 30% 100KHz 1.3A 0.07Ohm DCR T/R
Inductor Power Shielded Wirewound 2.7uH 20% 100KHz 0.72A 0.245Ohm DCR T/R
8-Bit OTPROM MCU, 12MHz, CMOS, SOIC-28
N-CH MOSFET 20V 5A 8-Pin SOP Dual Drain
8-Bit RISC MCU, 12MHz, OTPROM, 24-Pin SOIC
Inductor Power Shielded Wirewound 2.2uH 20% 100KHz 0.77A 0.205Ohm DCR T/R
N-CH Power MOSFET 500V 2A 3-Pin Through Hole
Inductor Power Shielded Wirewound 4.7uH 20% 100KHz 0.6A 0.35Ohm DCR T/R
Inductor Power Shielded Wirewound 15uH 20% 100KHz 0.27A 1.52Ohm DCR T/R
Inductor Power Shielded Wirewound 10uH 20% 100KHz 0.36A 0.9Ohm DCR T/R
Inductor Power Shielded Wirewound 1.5uH 30% 100KHz 0.92A 0.145Ohm DCR T/R
Trans MOSFET N-CH Si 20V 6A 8-Pin SOP T/R
Inductor Power Shielded Wirewound 22uH 20% 100KHz 0.25A 1.7Ohm DCR T/R
Inductor Power Shielded Wirewound 1uH 30% 100KHz 1.05A 0.105Ohm DCR T/R
