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International Rectifier

Trans MOSFET P-CH 100V 0.75A 14-Pin MO-036AB

Volume Production

Continuous Drain Current (ID): 750mA

Current Rating: -750mA

Drain to Source Breakdown Voltage: 100V

Drain to Source Voltage (Vdss): -100V

International Rectifier

Trans MOSFET N/P-CH 100V 1A/0.75A 14-Pin MO-036AB

Volume Production

Gate to Source Voltage (Vgs): 20V

Lead Free: Contains Lead

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

International Rectifier

Trans MOSFET N/P-CH 100V 1A 14-Pin MO-036AB

Volume Production

Continuous Drain Current (ID): 1A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

International Rectifier

Trans MOSFET N-CH 100V 1A 14-Pin MO-036AB

Volume Production

Continuous Drain Current (ID): 1A

Current Rating: 1A

Drain to Source Voltage (Vdss): 100V

Drain-source On Resistance-Max: 700mR

1000mA, 100V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HERMETIC SEALED PACKAGE-14

IN-LINE, R-PDIP-T14

Obsolete

Max Operating Temperature: 150

Number of Terminals: 14

Terminal Position: DUAL

Pin Count: 14

1A, 100V, 0.8ohm, 4 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, DIP-14

IN-LINE, R-CDIP-T14

Obsolete

Number of Terminals: 14

Terminal Position: DUAL

Pin Count: 14

Number of Elements: 4

Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN

MO-036AB, 14 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 14

Min Operating Temperature: -55

Terminal Position: DUAL

Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN

HERMETIC SEALED, MO-036AB, 14 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 14

Terminal Position: DUAL

JEDEC Package Code: MO-036AB

International Rectifier

Trans MOSFET N/P-CH 200V 0.68A 14-Pin MO-036AB

Volume Production

Continuous Drain Current (ID): 680mA

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

International Rectifier

Trans MOSFET N/P-CH 100V 1A 14-Pin MO-036AB

Volume Production

Packaging: Bulk

Radiation Hardening: No

International Rectifier

Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN

SMALL OUTLINE, R-PDSO-G4

Transferred

Package/Case: SOT-223

Continuous Drain Current (ID): -1.1A

Current Rating: -1.1A

Drain to Source Breakdown Voltage: -100V

Vishay(Siliconix)

Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

SOT-223, 4 PIN

Obsolete

Package/Case: SOT-223

Continuous Drain Current (ID): 1.1A

Current Rating: -1.1A

Drain to Source Breakdown Voltage: -100V

Vishay(Siliconix)

P-Channel MOSFET, 100V, 3.1A, 1.2Ω, TO-251

IPAK-3

Obsolete

Package/Case: TO-251-3

Continuous Drain Current (ID): 3.1A

Drain to Source Resistance: 1.2R

Drain to Source Voltage (Vdss): 100V

International Rectifier

Power Field-Effect Transistor, 2.5A I(D), 100V, 1.38ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Transferred

Continuous Drain Current (ID): 2.5A

Drain to Source Breakdown Voltage: -100V

Drain to Source Resistance: 1.2R

Drain to Source Voltage (Vdss): -100V

International Rectifier

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4

IN-LINE, R-PDIP-T3

Transferred

Package/Case: DIP

Continuous Drain Current (ID): 1A

Current Rating: -700mA

Drain to Source Breakdown Voltage: -100V

2.5A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Active

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Pin Count: 2

Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

SMALL OUTLINE, R-PSSO-G2

Transferred

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-252AA

Vishay(Siliconix)

Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

DPAK-3

Obsolete

Package/Case: TO-252-3

Continuous Drain Current (ID): 3.1A

Current Rating: -3.1A

Drain to Source Breakdown Voltage: -100V

International Rectifier

Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

DPAK-3

Obsolete

Package/Case: TO-252

Continuous Drain Current (ID): -3.1A

Current Rating: -3.1A

Drain to Source Breakdown Voltage: -100V

Power Field-Effect Transistor, 2.2A I(D), 100V, 1.38ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-14

CHIP CARRIER, R-CQCC-N14

Active

Max Operating Temperature: 150

Number of Terminals: 14

Terminal Position: QUAD

Number of Elements: 1