Power Field-Effect Transistor, 60A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 180A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, MODULE-10/8
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,
Power Field-Effect Transistor,
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, MODULE-24
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-24
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
Insulated Gate Bipolar Transistor, 135A I(C), 600V V(BR)CES, N-Channel, MODULE-24
Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel
Insulated Gate Bipolar Transistor, 180A I(C), 600V V(BR)CES, N-Channel, ECONO3, 39 PIN
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES, N-Channel,
Insulated Gate Bipolar Transistor, 180A I(C), 600V V(BR)CES, N-Channel, MODULE-7
INFINEON BSM10GD120DN2 IGBT Array & Module Transistor, N Channel, 15 A, 3.2 V, 80 W, 1.2 kV, EconoPACK
Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, ECONO3, 39 PIN
INFINEON BSM100GD120DN2 IGBT Array & Module Transistor, N Channel, 150 A, 3 V, 680 W, 1.2 kV, EconoPACK
Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel,
Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN
