Search Results for &quot; IRF7101 &quot;

50V 3A N-Channel MOSFET SOIC, 130mR Rds(on)

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 3A

Current Rating: 3A

Drain to Source Voltage (Vdss): 50V

+19

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 3.5A

Current Rating: 3.5A

Drain to Source Voltage (Vdss): 25V

+14

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 2

IRF7105QTRPBF

Power Field-Effect Transistor, N-Channel and P-Channel, Metal-oxide Semiconductor FET,

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 2.3A

Drain to Source Voltage (Vdss): 25V

FET Type: N and P-Channel

IRF7103QTRPBF

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 3A

Drain to Source Voltage (Vdss): 50V

Fall Time: 2.3ns

IRF7301

Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

MS-012AA

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 5.2A

Current Rating: 5.2A

Drain to Source Breakdown Voltage: 20V

+13

Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 7.3A

Drain to Source Voltage (Vdss): 30V

Input Capacitance: 550pF

Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

IRF7401

Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 8.7A

Current Rating: 8.7A

Drain to Source Breakdown Voltage: 20V

IRF7501

INTERNATIONAL RECTIFIER IRF7501 Dual MOSFET, Dual N Channel, 2.4 A, 30 V, 135 mohm, 2.7 V

Not Recommended for New Design

Continuous Drain Current (ID): 2.4A

Drain to Source Voltage (Vdss): 30V

Gate to Source Voltage (Vgs): 12V

Height: 0.86mm

IRF742

Harris

Power Field-Effect Transistor, 8A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF743

8.3A, 350V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

National Semiconductor

TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,4.5A I(D),TO-220AB

Obsolete

Max Operating Temperature: 150

N-Channel MOSFET, 400V, 5.5A, 1Ω, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Package/Case: TO-220AB

Continuous Drain Current (ID): 5.5A

Current Rating: 5.5A

Drain to Source Breakdown Voltage: 400V

+26

IRF720

Intersil

3.3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

TO-220AB

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Power Field-Effect Transistor, 4.5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF740

N-Channel MOSFET, 400V, 10A, 0.55ohm, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Package/Case: TO-220AB

Continuous Drain Current (ID): 10A

Current Rating: 10A

Drain to Source Resistance: 550mR

+25

IRF731

5.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Fairchild

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF733

Motorola

Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

TO-220AB

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Search Results for "IRF7101"

Filters

IRF7103TRPBF

50V 3A N-Channel MOSFET SOIC, 130mR Rds(on)

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 3A

Current Rating: 3A

Drain to Source Voltage (Vdss): 50V

+19

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 3.5A

Current Rating: 3.5A

Drain to Source Voltage (Vdss): 25V

+14

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 2

IRF7105QTRPBF

Power Field-Effect Transistor, N-Channel and P-Channel, Metal-oxide Semiconductor FET,

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 2.3A

Drain to Source Voltage (Vdss): 25V

FET Type: N and P-Channel

IRF7103QTRPBF

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 3A

Drain to Source Voltage (Vdss): 50V

Fall Time: 2.3ns

IRF7301

Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

MS-012AA

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 5.2A

Current Rating: 5.2A

Drain to Source Breakdown Voltage: 20V

+13

Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 7.3A

Drain to Source Voltage (Vdss): 30V

Input Capacitance: 550pF

Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

IRF7401

Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 8.7A

Current Rating: 8.7A

Drain to Source Breakdown Voltage: 20V

IRF7501

INTERNATIONAL RECTIFIER IRF7501 Dual MOSFET, Dual N Channel, 2.4 A, 30 V, 135 mohm, 2.7 V

Not Recommended for New Design

Continuous Drain Current (ID): 2.4A

Drain to Source Voltage (Vdss): 30V

Gate to Source Voltage (Vgs): 12V

Height: 0.86mm

IRF742

Harris

Power Field-Effect Transistor, 8A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF743

8.3A, 350V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

National Semiconductor

TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,4.5A I(D),TO-220AB

Obsolete

Max Operating Temperature: 150

N-Channel MOSFET, 400V, 5.5A, 1Ω, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Package/Case: TO-220AB

Continuous Drain Current (ID): 5.5A

Current Rating: 5.5A

Drain to Source Breakdown Voltage: 400V

+26

IRF720

Intersil

3.3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

TO-220AB

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Power Field-Effect Transistor, 4.5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF740

N-Channel MOSFET, 400V, 10A, 0.55ohm, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Package/Case: TO-220AB

Continuous Drain Current (ID): 10A

Current Rating: 10A

Drain to Source Resistance: 550mR

+25

IRF731

5.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Fairchild

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF733

Motorola

Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB