Search Results for &quot; IRLML2803TRPBF &quot;

Power Field-Effect Transistor, 2.3A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

Active

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

IRLMS5703TR

Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

MICRO-6

Active

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

IRLMS2002PBF

MOSFET, N, LOGIC, MICRO-6

Volume Production

Continuous Drain Current (ID): 6.5A

Drain to Source Voltage (Vdss): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

+11

IRLMS1503PBF

MOSFET, N, LOGIC, MICRO-6

Not Recommended for New Design

Continuous Drain Current (ID): 3.2A

Drain to Source Voltage (Vdss): 30V

Dual Supply Voltage: 30V

Max Power Dissipation: 1.7W

IRLMS6802TRHR

Trans MOSFET P-CH 20V 5.6A 6-Pin Micro T/R

Obsolete

IRLMS2002TRHR

Trans MOSFET N-CH 20V 6.5A 6-Pin Micro T/R

Obsolete

Continuous Drain Current (ID): 6.5A

Fall Time: 16ns

Gate to Source Voltage (Vgs): 12V

Max Operating Temperature: 150°C

IRLMS5703TRHR

Trans MOSFET P-CH 30V 2.3A 6-Pin Micro T/R

Obsolete

IRLMS1503TRHR

Trans MOSFET N-CH 30V 3.2A 6-Pin Micro T/R

Obsolete

Continuous Drain Current (ID): 3.2A

Fall Time: 2ns

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

IRLMS1902TRHR

Trans MOSFET N-CH 20V 3.2A 6-Pin Micro T/R

Obsolete

IRLMS6702TRHR

Trans MOSFET P-CH 20V 2.4A 6-Pin Micro T/R

Obsolete

Continuous Drain Current (ID): 2.4A

Fall Time: 18ns

Gate to Source Voltage (Vgs): 12V

Max Operating Temperature: 150°C

IRLMS6802TRPBF

Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

MICRO-6

Transferred

Continuous Drain Current (ID): 5.6A

Current Rating: -5.6A

Drain to Source Voltage (Vdss): 20V

Drain-source On Resistance-Max: 50mR

+10

IRLMS1503TRPBF

N-Channel MOSFET, 30V, 3.2A, 0.1ohm, 6-Pin

SMALL OUTLINE, R-PDSO-G6

Active

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

IRLMS2002TRPBF

N-Channel MOSFET, 20V, 6.5A, 300mR, Surface Mount

MICRO-6

Transferred

Continuous Drain Current (ID): 6.5A

Current Rating: 6.5A

Drain to Source Voltage (Vdss): 20V

Drain-source On Resistance-Max: 300mR

+19

IRLMS1902TRPBF

Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

SMALL OUTLINE, R-PDSO-G6

Active

Max Operating Temperature: 150

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

IRLMS5703TRPBF

P-Channel MOSFET, 30V, 2.4A, 180mR, SOT-23-6

MICRO-6

Transferred

Package/Case: SOT-23-6

Continuous Drain Current (ID): 2.4A

Current Rating: -2.3A

Drain to Source Voltage (Vdss): 30V

+24

IRLMS6702TRPBF

P-Channel MOSFET, 20V, 2.4A, 200mR, TSOP, SMT

Transferred

Package/Case: TSOP

Continuous Drain Current (ID): 2.4A

Current Rating: -2.3A

Drain to Source Voltage (Vdss): 20V

+20

IRLMS1503TRPBF

N-Channel MOSFET, 30V, 3.2A, 100mR, SOT-23

Transferred

Package/Case: SOT-23

Continuous Drain Current (ID): 3.2A

Current Rating: 3.2A

Drain to Source Voltage (Vdss): 30V

+19

IRLMS2002TRPBF

N-Channel MOSFET, 20V, 6.5A, 0.03ohm, 6-Pin

SMALL OUTLINE, R-PDSO-G6

Active

Max Operating Temperature: 150

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

IRLMS5703TRPBF

Power Field-Effect Transistor, 2.4A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

Obsolete

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

IRLMS1902TRPBF

Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6