Inductor RF Chip Multi-Layer 0.27uH 5% 50MHz 8Q-Factor Ceramic 0.15A 2.6Ohm DCR 0603 T/R
Inductor RF Chip Multi-Layer 0.033uH 5% 100MHz 12Q-Factor Ceramic 0.4A 0.7Ohm DCR 0603 T/R
Inductor RF Chip Multi-Layer 0.027uH 5% 100MHz 12Q-Factor Ceramic 0.4A 0.65Ohm DCR 0603 T/R
Inductor RF Chip Multi-Layer 0.039uH 5% 100MHz 8Q-Factor Ceramic 0.2A 1Ohm DCR 0402 T/R
Inductor RF Chip Multi-Layer 0.15uH 5% 50MHz 8Q-Factor Ceramic 0.2A 1.6Ohm DCR 0603 T/R
GAP PAD VO, .080, 4X4 SHEET; Insulator Body Material:Gap Pad VO; Thermal Conductivity:0.8W/m.K; Breakdown Voltage Vbr:6kV; SVHC:No SVHC (17-Dec-2015); Thickness:2mm; Volume Resistivity:100000Mohm-m; Thermal Impedance:-; Dielectric Strength:-; Product Range:-; Dielectric Constant:5.5; Electrical Property Ins / Con:Insulative; External Depth:2mm; External Length / Height:100mm; External Width:100mm; Length:100mm; Material:Gap Pad VO; Operating Temperature Max:200°C; Operating Temperature Min:-60°C; Operating Temperature Range:-60°C to +200°C; Overall Width:100mm; Thermal Conductivity (Cal/cm³/K):0.8Cal/cm³/K; Type:Thermal Pad
