Search Results for "SCT2080KEC"

Modular Temperature Controller

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package

Silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package

Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package

Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package

Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package

8-Bit RISC MCU, 12MHz, OTPROM, SOIC-20, Commercial

8-Bit RISC MCU, 12MHz, OTPROM, 18-Pin SOIC

N-CH MOSFET 30V 5A SOP 8-Pin Dual Drain

SiC MOSFET, N-Ch, 650V, 70A, 0.039Ω, TO-247

Silicon carbide Power MOSFET 1200 V, 91 A, 21 mOhm (typ. TJ = 25 C) in an HiP247 package

Automotive-grade silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package

Silicon carbide Power MOSFET 650 V, 45 A, 75 mOhm (typ. TJ = 175 C) in an HiP247 long leads package

Power Field-Effect Transistor, 17A I(D), 1200V, 0.208ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN

N-CH MOSFET 30V 13A 8-Pin SOP SMT

SiC MOSFET, 1200V, 72A, 0.039Ω, N-Ch, TO-247

Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package

P-CH MOSFET 30V 6A Si 8-Pin SMT

Power Field-Effect Transistor, 55A I(D), 1200V, 0.052ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN