Power Field-Effect Transistor, 3.1A I(D), 60V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 2P-CH 20V 7A 8DSO
Power Field-Effect Transistor, 3A I(D), 60V, 0.12ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-8
MOSFET 2P-CH 20V 4A 8DSO
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
MOSFET 2N-CH 30V 8A 8SOIC
Power Field-Effect Transistor, 8.9A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Power Field-Effect Transistor, 6.4A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
INFINEON - BSO615NGHUMA1 - MOSFET, 2FACH, N-KANAL, 60V, 2.6A, 8SOIC
Power Field-Effect Transistor, 14.9A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOP-8
MOSFET N-CH 30V 12.7A 8-SOIC
MOSFET 2P-CH 20V 5A 8DSO
Power Field-Effect Transistor, 9.8A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 3.44A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
MOSFET P-KANAL
N-Channel MOSFET, 30V, 5A, 35mR, SOIC, Surface Mount
Enclosure Accessories; Hole Seal; For 1 1/4-In Conduit; 2.19 Dia; Steel; Gray
Metal enclosure pebble grey RAL 7032 320 x 160 x 100 mm Aluminium IP 65, AS 164, Rolec
HOFFMAN ENCLOSURES AS100 HOLE SEAL, STEEL, 35MM
Metal enclosure pebble grey RAL 7032 200 x 100 x 80 mm Aluminium IP 65, AS 104, Rolec
