68uF 16V 20% Aluminum Electrolytic Capacitor SMD
Trans IGBT Module N-CH 1200V 20A 105000mW 23-Pin EASY1B-1 Tray
Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, MODULE-23
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-24
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
Inductor Power Shielded Wirewound 0.12uH/0.086uH 10% 100KHz Ferrite 72A 0.00012Ohm DCR
Inductor Power Shielded Wirewound 100nH/72nH 10% 100KHz Ferrite 60A 0.00019Ohm DCR
10uF 16V 20% Aluminum Electrolytic Capacitor, 105°C, SMD
220uF 10V 20% Aluminum Electrolytic Capacitor, SMD
220uF 25V 20% Aluminum Electrolytic Capacitor, 80mR ESR, 105°C
470uF 10V Aluminum Electrolytic Capacitor, Radial, SMD, 80mR ESR
150uF 10V 20% Aluminum Electrolytic Capacitor, 105°C, SMD
68uF 25V 20% Aluminum Electrolytic Capacitor, 105°C, SMD
10uF 25V 20% Aluminum Electrolytic Capacitor SMD
33uF 10V 20% Aluminum Electrolytic Capacitor, SMD
220uF 16V 20% 105°C Aluminum Electrolytic Capacitor SMD
Trans IGBT Module N-CH 1200V 28A 130000mW 23-Pin EASY1B-1 Tray
Inductor Power Shielded Wirewound 120nH/84nH 15% 100KHz Ferrite 50A 0.000185Ohm DCR
SMD Power Inductor 0.22uH 79A 0.00017 Ohm DCR
100uF 50V Al Electrolytic Capacitor SMD 180mR 670mA 105C
