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MOSFET 100V N-Channel A-FET

Obsolete

Package/Case: DPAK

Continuous Drain Current (ID): 4.7A

Drain to Source Breakdown Voltage: 100V

Drain to Source Resistance: 400mR

Power Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

SMALL OUTLINE, R-PSSO-G2

Obsolete

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-252

Vishay(Intertechnologies)

N-Channel MOSFET, 100V, 7.7A, 270mR, TO-252, Surface Mount

Obsolete

Package/Case: TO-252-3

Continuous Drain Current (ID): 7.7A

Current Rating: 7.7A

Drain to Source Resistance: 270mR

International Rectifier

Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

SMALL OUTLINE, R-PSSO-G2

Obsolete

Package/Case: DPAK

Continuous Drain Current (ID): 9.4A

Drain to Source Voltage (Vdss): 100V

Fall Time: 23ns

International Rectifier

Trans MOSFET N-CH 200V 13A 3-Pin(2+Tab) DPAK

Not Recommended for New Design

Package/Case: DPAK

Continuous Drain Current (ID): 13A

Current Rating: 13A

Gate to Source Voltage (Vgs): 30V

International Rectifier

Power Field-Effect Transistor, 18A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

PLASTIC, DPAK-3

Transferred

Package/Case: TO-252-3

Continuous Drain Current (ID): 18A

Drain to Source Voltage (Vdss): 150V

Input Capacitance: 900pF

MOSFET N-CH 100V 8.4A DPAK

Obsolete

Package/Case: TO-252AA

Continuous Drain Current (ID): 8.4A

Drain to Source Breakdown Voltage: 100V

Drain to Source Resistance: 200mR

Vishay(Siliconix)

MOSFET N-CH 100V 4.3A DPAK

Obsolete

Package/Case: TO-252-3

Continuous Drain Current (ID): 4.3A

Drain to Source Voltage (Vdss): 100V

Input Capacitance: 180pF

International Rectifier

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

SMALL OUTLINE, R-PSSO-G2

Transferred

Package/Case: TO-252

Continuous Drain Current (ID): 7.7A

Current Rating: 7.7A

Drain to Source Voltage (Vdss): 100V

Power Field-Effect Transistor, 18A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

PLASTIC, DPAK-3

Obsolete

Max Operating Temperature: 175

Number of Terminals: 2

Min Operating Temperature: -55

Terminal Position: SINGLE

Power Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

SMALL OUTLINE, R-PSSO-G2

Obsolete

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-252

International Rectifier

Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

SMALL OUTLINE, R-PSSO-G2

Obsolete

Resistance: 0.027R

RoHS Compliant: No

International Rectifier

Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

SMALL OUTLINE, R-PSSO-G2

Transferred

Package/Case: TO-252-3

Continuous Drain Current (ID): 44A

Current Rating: 37A

Drain to Source Voltage (Vdss): 55V

Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

SMALL OUTLINE, R-PSSO-G2

Obsolete

Max Operating Temperature: 175

Number of Terminals: 2

Min Operating Temperature: -55

Terminal Position: SINGLE

International Rectifier

N-Channel MOSFET, 55V, 44A, 27mR, DPAK, Surface Mount

SMALL OUTLINE, R-PSSO-G2

Transferred

Package/Case: DPAK

Continuous Drain Current (ID): 44A

Current Rating: 37A

Drain to Source Voltage (Vdss): 55V

International Rectifier

Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

SMALL OUTLINE, R-PSSO-G2

Transferred

Package/Case: DPAK

Continuous Drain Current (ID): 9.4A

Current Rating: 9.4A

Drain to Source Voltage (Vdss): 100V

Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

SMALL OUTLINE, R-PSSO-G2

Obsolete

Max Operating Temperature: 175

Number of Terminals: 2

Min Operating Temperature: -55

Terminal Position: SINGLE

Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

SMALL OUTLINE, R-PSSO-G2

Obsolete

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-252AA

International Rectifier

N-Channel MOSFET, 100V, 8.7A, 190mR, DPAK, Surface Mount

LEAD FREE, PLASTIC, DPAK-3

Transferred

Package/Case: DPAK

Continuous Drain Current (ID): 8.7A

Current Rating: 8.7A

Drain to Source Breakdown Voltage: 100V

Vishay(Siliconix)

600V 1.4A N-Channel MOSFET, 7 Ohm, TO-252 DPAK

DPAK-3

Obsolete

Package/Case: TO-252-3

Continuous Drain Current (ID): 1.4A

Drain to Source Resistance: 7R

Drain to Source Voltage (Vdss): 600V

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