Search Results for "SCT2004CSOG SOP-8"

Inductor Power Shielded Wirewound 6.8uH 20% 100KHz 0.49A 0.515Ohm DCR T/R

8-Bit RISC MCU, 12MHz, OTPROM, SOIC-20, Commercial

Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

Modular Temperature Controller

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package

Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package

8-Bit RISC MCU, 12MHz, OTPROM, 18-Pin SOIC

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package

Silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package

Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package

Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package

P-CH MOSFET 30V 6A Si 8-Pin SMT

SiC MOSFET, N-Ch, 650V, 70A, 0.039Ω, TO-247

Silicon carbide Power MOSFET 1200 V, 91 A, 21 mOhm (typ. TJ = 25 C) in an HiP247 package

Power Field-Effect Transistor, 17A I(D), 1200V, 0.208ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN

SiC MOSFET, 1200V, 72A, 0.039Ω, N-Ch, TO-247

Power Field-Effect Transistor, 93A I(D), 650V, 0.0286ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN

SiC MOSFET, 1200V, 31A, N-Ch, 0.104Ω, TO-247

650V 21A N-Ch SiC MOSFET TO-247 3-Pin

Power Field-Effect Transistor, 55A I(D), 1200V, 0.052ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN