Semisouth is a manufacturer of wide bandgap semiconductor devices, specializing in silicon carbide (SiC) power electronics. They offer a range of SiC diodes, transistors, and modules designed for high-voltage, high-temperature, and high-frequency applications.
SEMISOUTH SDA10S120 Silicon Carbide Schottky Diode, SIC, Single, 1.2 kV, 10 A, 64 nC, TO-220
JFET, SIC, N-OFF, 1200V, 17A, TO247
SEMISOUTH SDP10S120D Silicon Carbide Schottky Diode, SIC, Dual Common Cathode, 1.2 kV, 10 A, 39 nC, TO-247
SEMISOUTH SDP30S120 Silicon Carbide Schottky Diode, SIC, Single, 1.2 kV, 30 A, 13 nC, TO-247
BOARD, DEMO, SIC, HALF BRIDGE, CASCODE
SEMISOUTH SDP20S120D Silicon Carbide Schottky Diode, SIC, Dual Common Cathode, 1.2 kV, 20 A, 80 nC, TO-247
SEMISOUTH SGDR2500P2 APTJC120AM13VCT1AG, EVALUATION BOARD
SEMISOUTH SDP60S120D Silicon Carbide Schottky Diode, SIC, SDP60 Series, Dual Common Cathode, 1.2 kV, 60 A, 260 nC
SEMISOUTH SGDR600P1 SJEP120R063, SJEP120R050, EVAL BOARD
JFET, SIC, N-ON, 1200V, 48A, TO247
JFET, SIC, N-OFF, 1700V, 4A, TO-247; Transistor Type: JFET; Breakdown Voltage Vbr: 1700V; Power Dissipation Pd: 58W;...
JFET, SIC, N-OFF, 1200V, 30A, TO247; Transistor Type: JFET; Breakdown Voltage Vbr: 1200V; Power Dissipation Pd: 250W;...
JFET, SIC, N-ON, 1700V, 3A, TO247; Breakdown Voltage Vbr: 1.7kV; Zero Gate Voltage Drain Current Idss Max: -;...
TRANSISTOR, JFET, 1200V, TO-247-3; Transistor Type: JFET; Breakdown Voltage Vbr: 1200V; Gate-Source Cutoff Voltage...
JFET, SIC, N-ON, 1700V, 3A, D2PAK 7L; Breakdown Voltage Vbr: 1.7kV; Zero Gate Voltage Drain Current Idss Max: -;...
Jfet, Sic, Audio, 1200V, 30A, TO247
JFET, SIC, N-ON, 1200V, 27A, TO247; Transistor Type: JFET; Breakdown Voltage Vbr: 1200V; Power Dissipation Pd: 114W;...