Search Results for &quot; FDMS4435BZ &quot;

P-Channel MOSFET -30V, -18A, 20mΩ, Surface Mount

SMALL OUTLINE, R-PDSO-F5

Active

Continuous Drain Current (ID): 18A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 20mR

Drain to Source Voltage (Vdss): 30V

P-Channel MOSFET, 30V, 9A, 0.02ohm, 8-Pin, MO-240AA

ROHS COMPLIANT, POWER 56, 8 PIN

Transferred

Max Operating Temperature: 150

Number of Terminals: 5

Terminal Position: DUAL

JEDEC Package Code: MO-240AA

P-Channel MOSFET -30V, -8.8A, 20mΩ, SOIC, Tape & Reel

SOP-8

Active

Package/Case: SOIC

Continuous Drain Current (ID): 8.8A

Current Rating: -8.8A

Drain to Source Breakdown Voltage: -30V

P-Channel MOSFET -30V, 20mR, 8.5A, Surface Mount

SMALL OUTLINE, S-PDSO-N5

Active

Continuous Drain Current (ID): 8.5A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 20mR

Drain to Source Voltage (Vdss): 30V

P-Channel JFET, -30V, -8.8A, 20mΩ, SOIC, Surface Mount

SMALL OUTLINE, R-PDSO-G8

Active

Package/Case: SOIC

Continuous Drain Current (ID): 8.8A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 26mR

FDMC4435BZ_F127

MOSFET -30V P-CH PwrTrench

Volume Production

Continuous Drain Current (ID): -8.5A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 20mR

Max Operating Temperature: 150°C

FDMC4435BZ-F126

P-Channel Power Trench® MOSFET -30V, -18A, 20mO

End of Life

Continuous Drain Current (ID): 18A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 20mR

Drain to Source Voltage (Vdss): 30V

P-Channel JFET, 30V, 8.8A, SOP-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Pin Count: 8

Rochester Electronics

FDS4435BZ 30V -8.8A N-Channel MOSFET SOIC

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): -8.8A

Current Rating: -8.8A

Drain to Source Resistance: 16mR

FDMC4435BZ_F125

MOSFET -30V P-CH PwrTrench

Obsolete

Continuous Drain Current (ID): -8.5A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 20mR

Max Operating Temperature: 150°C

P-Channel MOSFET, 30V, 8.5A, 0.02ohm, 8-Pin MLP

SMALL OUTLINE, S-PDSO-N5

Transferred

Max Operating Temperature: 150

Number of Terminals: 5

Terminal Position: DUAL

Pin Count: 8

Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Pin Count: 8

FDS4435BZ_F021

FDS4435BZ Series -30 V -8.8 A P-Channel PowerTrench® MOSFET - SOIC-8

Not Recommended for New Design

Package/Case: SOIC

Drain to Source Voltage (Vdss): 30V

Drain-source On Resistance-Max: 20MR

Lead Free: Lead Free

FDS4435BZ-F085

P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ, SO 8L NB, 2500-REEL

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

FDS4435BZ_NL

Volume Production

FDS4435BZ_G

Volume Production

Transistor

Obsolete

Max Operating Temperature: 150

Number of Elements: 1

Search Results for "FDMS4435BZ"

Filters

P-Channel MOSFET -30V, -18A, 20mΩ, Surface Mount

SMALL OUTLINE, R-PDSO-F5

Active

Continuous Drain Current (ID): 18A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 20mR

Drain to Source Voltage (Vdss): 30V

P-Channel MOSFET, 30V, 9A, 0.02ohm, 8-Pin, MO-240AA

ROHS COMPLIANT, POWER 56, 8 PIN

Transferred

Max Operating Temperature: 150

Number of Terminals: 5

Terminal Position: DUAL

JEDEC Package Code: MO-240AA

P-Channel MOSFET -30V, -8.8A, 20mΩ, SOIC, Tape & Reel

SOP-8

Active

Package/Case: SOIC

Continuous Drain Current (ID): 8.8A

Current Rating: -8.8A

Drain to Source Breakdown Voltage: -30V

P-Channel MOSFET -30V, 20mR, 8.5A, Surface Mount

SMALL OUTLINE, S-PDSO-N5

Active

Continuous Drain Current (ID): 8.5A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 20mR

Drain to Source Voltage (Vdss): 30V

P-Channel JFET, -30V, -8.8A, 20mΩ, SOIC, Surface Mount

SMALL OUTLINE, R-PDSO-G8

Active

Package/Case: SOIC

Continuous Drain Current (ID): 8.8A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 26mR

FDMC4435BZ_F127

MOSFET -30V P-CH PwrTrench

Volume Production

Continuous Drain Current (ID): -8.5A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 20mR

Max Operating Temperature: 150°C

FDMC4435BZ-F126

P-Channel Power Trench® MOSFET -30V, -18A, 20mO

End of Life

Continuous Drain Current (ID): 18A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 20mR

Drain to Source Voltage (Vdss): 30V

P-Channel JFET, 30V, 8.8A, SOP-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Pin Count: 8

Rochester Electronics

FDS4435BZ 30V -8.8A N-Channel MOSFET SOIC

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): -8.8A

Current Rating: -8.8A

Drain to Source Resistance: 16mR

FDMC4435BZ_F125

MOSFET -30V P-CH PwrTrench

Obsolete

Continuous Drain Current (ID): -8.5A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 20mR

Max Operating Temperature: 150°C

P-Channel MOSFET, 30V, 8.5A, 0.02ohm, 8-Pin MLP

SMALL OUTLINE, S-PDSO-N5

Transferred

Max Operating Temperature: 150

Number of Terminals: 5

Terminal Position: DUAL

Pin Count: 8

Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Pin Count: 8

FDS4435BZ_F021

FDS4435BZ Series -30 V -8.8 A P-Channel PowerTrench® MOSFET - SOIC-8

Not Recommended for New Design

Package/Case: SOIC

Drain to Source Voltage (Vdss): 30V

Drain-source On Resistance-Max: 20MR

Lead Free: Lead Free

FDS4435BZ-F085

P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ, SO 8L NB, 2500-REEL