Search Results for "97a6 jiangsu jiejie Changzhou Galaxy Century Microelectronics"

MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 7 Milliohms; ID 97A; D2Pak; PD 190W; VGS +/-20V

SMD Shielded Power Inductor 2.2uH 9.6A 5.7mR DCR 100kHz

TVS Diodes - Transient Voltage Suppressors 400W 30V 5% Bidir

DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC, GL41, MELF-2, Transient Suppressor

DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC, GL41, MELF-2, Transient Suppressor

Conn Circular PIN 12 POS ST Jam Nut 12 Terminal 1 Port

P-Channel JFET, 30V, 9.7A ID, 10.5mR Rds(on), SOIC

Zener Diode TransZorb 28.5V 175°C 9.7A 400W DO-204AL

400W TVS Diode, Unidirectional, 25.6V, DO-41, Through Hole

TVS Diode, Bidirectional, 40V, 64.5V Clamping, 600W, SMB

400W Bidirectional TVS Diode, 25.6V, DO-204AL, Through Hole

Single Channel Gate Driver IC, SOIC, 125°C, 11.4A, AEC-Q100

Zener Diodes 22 Volt 600W 6%

11.4A Sink/10.6A Source Low-Side Gate Driver IC

Shielded Toroid Inductor 18uH 9.7A 15% Through-Hole Radial

TVS Diode, 25.6V, 400W, Unidirectional, DO-220AA, SMT

600W Unidirectional TVS Diode, 49V Breakdown, SMB

AC/DC CONVERTER 12V 750W

Zener Diode Single 22V 6% 3.25W 1-Pin Through Hole

P-Channel MOSFET, 50V, 9.7A, 280mR, TO-220AB