Inductor Power Shielded Wirewound 0.56uH 30% 100KHz 1.3A 0.07Ohm DCR T/R
Inductor Power Shielded Wirewound 2.7uH 20% 100KHz 0.72A 0.245Ohm DCR T/R
SiC MOSFET 1200V 14A N-Channel TO-247 280mR
650V 29A N-Ch SiC MOSFET TO-220-3
Inductor Power Shielded Wirewound 2.2uH 20% 100KHz 0.77A 0.205Ohm DCR T/R
N-CH Power MOSFET 500V 2A 3-Pin Through Hole
SiC MOSFET N-Ch 1200V 22A 208mR TO-247
Inductor Power Shielded Wirewound 4.7uH 20% 100KHz 0.6A 0.35Ohm DCR T/R
Inductor Power Shielded Wirewound 15uH 20% 100KHz 0.27A 1.52Ohm DCR T/R
Inductor Power Shielded Wirewound 10uH 20% 100KHz 0.36A 0.9Ohm DCR T/R
Inductor Power Shielded Wirewound 1.5uH 30% 100KHz 0.92A 0.145Ohm DCR T/R
Inductor Power Shielded Wirewound 1uH 30% 100KHz 1.05A 0.105Ohm DCR T/R
Inductor Power Shielded Wirewound 22uH 20% 100KHz 0.25A 1.7Ohm DCR T/R
Inductor Power Shielded Wirewound 6.8uH 20% 100KHz 0.49A 0.515Ohm DCR T/R
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
N-Channel MOSFET, 175°C, 2-Terminal, TO-268AA
2-Terminal MOSFET, TO-268AA Package, Single
8-Bit OTPROM MCU, 12MHz, CMOS, SOIC-28
Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
Modular Temperature Controller
