Search Results for "T SPD04P10G PG-TO252-3"

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

DC Solid State Power Controller Module

Power Field-Effect Transistor, 10.5A I(D), 100V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3

Power Field-Effect Transistor, 35A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-252, 3 PIN

Power Field-Effect Transistor, 13.5A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3

Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-252, 3 PIN

Inductor Power Shielded Wirewound 150uH 20% 1KHz Ferrite 0.51A 0.89Ohm DCR T/R

Inductor Power Shielded Wirewound 82uH 20% 1KHz Ferrite 1A 0.43Ohm DCR T/R

Inductor Power Shielded Wirewound 18uH 20% 1KHz Ferrite 2.15A 0.091Ohm DCR T/R

Inductor Power Shielded Wirewound 270uH 20% 1KHz Ferrite 0.53A 1.64Ohm DCR T/R

Inductor Power Shielded Wirewound 56uH 20% 1KHz Ferrite 1.1A 0.35Ohm DCR T/R

Inductor Power Shielded Wirewound 18uH 20% 1KHz Ferrite 1.28A 0.14Ohm DCR T/R

Inductor Power Shielded Wirewound 180uH 20% 1KHz Ferrite 0.35A 2.1Ohm DCR T/R

Inductor Power Shielded Wirewound 150uH 20% 1KHz Ferrite 0.7A 0.88Ohm DCR T/R

Inductor Power Shielded Wirewound 4.7uH 20% 100KHz Ferrite 3.5A 0.038Ohm DCR T/R

Inductor Power Shielded Wirewound 270uH 20% 1KHz Ferrite 0.316A 2.31Ohm DCR T/R

Inductor Power Shielded Wirewound 1.2uH 20% 100KHz Ferrite 4.4A 0.025Ohm DCR T/R

Inductor Power Shielded Wirewound 560uH 20% 1KHz Ferrite 0.222A 4.67Ohm DCR T/R