
TRANSISTOR, PNP, TO-18; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:-; Power Dissipation Pd:400mW; DC Collector Current:600mA; DC Current Gain hFE:40; Transistor Case Style:TO-18; No. of Pins:3; Operating Temperature Max:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Collector Emitter Saturation Voltage Vce(on):400mV; Continuous Collector Current Ic Max:600mA; Current Ic @ Vce Sat:150mA; Current Ic Continuous a Max:600mA; Current Ic hFE:500mA; Fall Time @ Ic:50ns; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:200MHz; Gain Bandwidth ft Typ:200MHz; Hfe Min:40; No. of Transistors:1; Pin Configuration:a; Power Dissipation Ptot Max:400mW; Voltage Vcbo:60V
TRANSISTOR NPN SILICON PWR HI VOLT HI SPEED SWITCH LOW VCE SATURATION 1500V 10A

Single-Channel CTR N/A% Vce 7V Uiso 5, 0kV Open Collector; Equivalent: 6N137S-TA1-L;
PS2561 Series Dual Channel 80 Vce 5000 Vrms -55 - 110°C SMT Photocoupler - DIP-4