
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3

Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3

Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Cap Aluminum Lytic 1800uF 100V 20% (30 X 25mm) Snap-In 10mm 0.138 Ohm 2300mA 2000h 105°C
Cap Aluminum Lytic 1200uF 100V 20% (22 X 35mm) Snap-In 10mm 0.195 Ohm 1800mA 3000h 85°C
Cap Aluminum Lytic 1800uF 100V 20% (35 X 30mm) Snap-In 10mm 0.111 Ohm 2300mA 3000h 105°C